HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Results: 720
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging

IXYS MOSFETs Trench T2 Power MOSFET Non-Stocked Lead-Time 28 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 40 V 300 A 2.5 mOhms - 20 V, 20 V 4 V 145 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube

IXYS MOSFETs TRENCHT2 PWR MOSFET 55V 440A Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 55 V 440 A 1.8 mOhms - 20 V, 20 V 2 V 405 nC - 55 C + 175 C 1 mW Enhancement HiPerFET Tube

IXYS MOSFETs Trench Gate Power MOSFET Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 50 A 60 mOhms HiPerFET Tube

IXYS MOSFETs 650V/9A Power MOSFET Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 52 A 68 mOhms - 30 V, 30 V 3 V 113 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChTrenchGate-Gen1 TO-247AD Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 250 V 86 A 37 mOhms - 20 V, 20 V 3 V - 55 C + 150 C 540 W HiPerFET Tube

IXYS MOSFETs 96 Amps 250V 36 Rds Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 96 A 29 mOhms - 30 V, 30 V - 55 C + 150 C 625 W Enhancement HiPerFET Tube
IXYS MOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET Non-Stocked Lead-Time 25 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 55 V 550 A 1.6 mOhms - 20 V, 20 V 2 V 595 nC - 55 C + 175 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFETs 180 Amps 100V 6.1 Rds Non-Stocked
Min.: 300
Mult.: 25

Si Through Hole ISOPLUS-i5-PAK-5 N-Channel 2 Channel 100 V 200 A 7.4 mOhms - 55 C + 175 C 150 W Enhancement HiPerFET Tube
IXYS MOSFETs 102 Amps 150V 18 Rds Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 102 A 18 mOhms - 20 V, 20 V - 55 C + 175 C 455 W Enhancement HiPerFET Tube
IXYS MOSFETs 120 Amps 40V Non-Stocked Lead-Time 28 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 120 A 6.1 mOhms - 20 V, 20 V 4 V 58 nC - 55 C + 175 C 200 W Enhancement HiPerFET Tube
IXYS MOSFETs TO220 650V 12A N-CH X2CLASS Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 12 A 300 mOhms - 30 V, 30 V 2.5 V 17.7 nC - 55 C + 150 C 180 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltraJnctX2Class TO-220AB/FP Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 300 mOhms - 30 V, 30 V 2.5 V - 55 C + 150 C 40 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltraJnctX2Class TO-220AB/FP Non-Stocked Lead-Time 41 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 12 A 300 mOhms - 30 V, 30 V 2.5 V - 55 C + 150 C 180 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltraJnctX2Class TO-220AB/FP Non-Stocked Lead-Time 41 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 12 A 300 mOhms - 30 V, 30 V 2.5 V - 55 C + 150 C 180 W Enhancement HiPerFET Tube
IXYS MOSFETs MOSFET Id130 BVdass100 Non-Stocked Lead-Time 23 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 130 A 8.5 mOhms - 55 C + 175 C 360 W Enhancement HiPerFET Tube
IXYS MOSFETs 140 Amps 0V Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 55 V 140 A 5.4 mOhms - 20 V, 20 V 2 V 82 nC - 55 C + 175 C 180 W Enhancement HiPerFET Tube
IXYS MOSFETs 160 Amps 40V Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 160 A 5 mOhms - 20 V, 20 V 2 V 79 nC - 55 C + 175 C 250 W Enhancement HiPerFET Tube
IXYS MOSFETs IXTP170N13X4 Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 135 V 170 A 6.3 mOhms - 20 V, 20 V 2.5 V 105 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs 200 Amps 55V 0.0042 Rds Non-Stocked Lead-Time 23 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 55 V 200 A 4.2 mOhms - 20 V, 20 V 2 V 109 nC - 55 C + 175 C 360 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/9A Power MOSFET Non-Stocked
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 20 A 210 mOhms - 30 V, 30 V 3 V 35 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltraJnctX2Class TO-220AB/FP Non-Stocked Lead-Time 41 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 20 A 185 mOhms - 30 V, 30 V 2.5 V - 55 C + 150 C 290 W Enhancement HiPerFET Tube
IXYS MOSFETs TO220 650V 20A N-CH X2CLASS Non-Stocked Lead-Time 41 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 20 A 185 mOhms - 30 V, 30 V 2.5 V - 55 C + 150 C 290 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/9A Power MOSFET Non-Stocked
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 9 A 210 mOhms - 30 V, 30 V 3 V 35 nC - 55 C + 150 C 63 W Enhancement HiPerFET Tube
IXYS MOSFETs Disc MSFT NChTrenchGate-Gen4 TO-220AB/FP Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 230 A 2.9 mOhms - 15 V, 15 V 2 V 140 nC - 55 C + 175 C 340 W Enhancement HiPerFET Tube
IXYS MOSFETs Disc MSFT NChTrenchGate-Gen4 TO-220AB/FP Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 40 V 230 A 2.9 mOhms - 15 V, 15 V 2 V - 55 C + 175 C 340 W HiPerFET Tube