HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Results: 720
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging
IXYS MOSFETs DiscMSFT NChUltraJnctX2Class TO-220AB/FP Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 24 A 145 mOhms - 30 V, 30 V 3 V - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFETs 40V/270A TrenchT4 Power MOSFET Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 270 A 2.4 mOhms - 15 V, 15 V 2 V 182 nC - 55 C + 175 C 375 W Enhancement HiPerFET Tube
IXYS MOSFETs 32 Amps 200V 78 Rds Non-Stocked
Min.: 50
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 32 A 78 mOhms - 20 V, 20 V - 55 C + 175 C 200 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/9A Power MOSFET Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 32 A 135 mOhms - 30 V, 30 V 3 V 54 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFETs 42 Amps 150V 0.045 Rds Non-Stocked Lead-Time 23 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 42 A 45 mOhms HiPerFET Tube
IXYS MOSFETs 56 Amps 150V 36 Rds Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 150 V 56 A 36 mOhms HiPerFET Tube
IXYS MOSFETs DiscMSFT NChTrenchGate-Gen2 TO-220AB/FP Non-Stocked Lead-Time 28 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 120 V 80 A 17 mOhms - 20 V, 20 V 2.5 V 80 nC - 55 C + 175 C 325 W Enhancement HiPerFET Tube
IXYS MOSFETs 700V/8A Ultra Junct X2-Class MOSFET Non-Stocked Lead-Time 41 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 8 A 500 mOhms - 30 V, 30 V 3 V 12 nC - 55 C + 150 C 150 W Enhancement HiPerFET Tube
IXYS MOSFETs 700V/4A Ultra Junct X2-Class MOSFET Non-Stocked Lead-Time 41 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 8 A 500 mOhms - 30 V, 30 V 3 V 12 nC - 55 C + 150 C 150 W Enhancement HiPerFET Tube
IXYS MOSFETs 90 Amps 75V 0.01 Rds Non-Stocked Lead-Time 23 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 75 V 90 A 10 mOhms - 20 V, 20 V 2 V 54 nC - 55 C + 175 C 180 W Enhancement HiPerFET Tube
IXYS MOSFETs 102 Amps 150V 18 Rds Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 150 V 102 A 18 mOhms - 20 V, 20 V - 55 C + 175 C 455 W Enhancement HiPerFET Bulk
IXYS MOSFETs DiscMSFT NChTrenchGate-Gen1 TO-3P (3) Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-3P N-Channel 200 V 130 A 16 mOhms - 20 V, 20 V 2.5 V - 55 C + 175 C 830 W HiPerFET Tube
IXYS MOSFETs 160 Amps 100V 6.9 Rds Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 100 V 160 A 7 mOhms - 55 C + 175 C 430 W Enhancement HiPerFET Tube
IXYS MOSFETs 180 Amps 100V 6.1 Rds Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 100 V 180 A 6.4 mOhms - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs 200 Amps 100V 5.4 Rds Non-Stocked Lead-Time 31 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 100 V 200 A 5.5 mOhms - 30 V, 30 V 2.5 V 152 nC - 55 C + 175 C 550 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/9A Power MOSFET Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 650 V 32 A 135 mOhms - 30 V, 30 V 3 V 54 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFETs Discrete MOSFET 34A 650V X2 TO3P FP Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-3PFP-3 N-Channel 1 Channel 650 V 34 A 96 mOhms - 30 V, 30 V 5 V 54 nC - 55 C + 150 C 43 W Enhancement HiPerFET Tube
IXYS MOSFETs 48 Amps 200V 50 Rds Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 200 V 48 A 50 mOhms - 30 V, 30 V 4.5 V 60 nC - 55 C + 175 C 250 W Enhancement HiPerFET Tube
IXYS MOSFETs Discrete MOSFET 48A 650V X2 TO3P FP Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-3PFP-3 N-Channel 1 Channel 650 V 48 A 65 mOhms - 30 V, 30 V 5 V 76 nC - 55 C + 150 C 70 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChTrenchGate-Gen1 TO-3P (3) Non-Stocked Lead-Time 23 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-3P N-Channel 100 V 60 A 18 mOhms - 30 V, 30 V 2.5 V - 55 C + 175 C 176 W HiPerFET Tube
IXYS MOSFETs 86 Amps 200V 29 Rds Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 200 V 86 A 29 mOhms - 30 V, 30 V 5 V 90 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChTrenchGate-Gen1 TO-3P (3) Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-3P-3 N-Channel 250 V 86 A 37 mOhms - 20 V, 20 V 3 V - 55 C + 150 C 540 W HiPerFET Tube
IXYS MOSFETs 96 Amps 250V 36 Rds Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 250 V 96 A 29 mOhms - 30 V, 30 V 5 V 114 nC - 55 C + 150 C 625 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltraJnctnX2Class ISOPLUS247 Non-Stocked Lead-Time 29 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 54 A 33 mOhms - 30 V, 30 V 3 V 152 nC - 55 C + 150 C 330 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltraJnctn X2Class TO-268AA Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 650 V 34 A 96 mOhms - 30 V, 30 V 3 V 54 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube