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LMG3100R044VBER

Name: Texas Instruments LMG3100R044VBER
Brand: Texas Instruments
SKU: 595-LMG3100R044VBER
Price: 7.76 USD
Availability: InStock

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Mouser No:

595-LMG3100R044VBER

Mfr. No:

LMG3100R044VBER

Mfr.:

Texas Instruments

Description:

Gate Drivers 100V 4.4mohm GaN FET with integrated dri

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

LMG3100R044VBER Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments LMG3100R044VBER

In Stock: 2,104

Stock:: 2,104 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$7.76	$7.76
	$5.94	$59.40
	$5.54	$138.50
	$4.87	$487.00
	$4.62	$1,155.00
	$4.18	$2,090.00
Full Reel (Order in multiples of 2500)
	$4.18	$10,450.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
RoHS:
Product:	Gate Drivers
Mounting Style:	SMD/SMT
Package/Case:	VQFN-15
Number of Outputs:	1 Output
Supply Voltage - Min:	4.75 V
Supply Voltage - Max:	5.25 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	LMG3100R044
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Development Kit:	LMG3100EVM-089
Input Voltage - Max:	5.25 V
Input Voltage - Min:	4.75 V
Moisture Sensitive:	Yes
Operating Supply Current:	35 A
Product Type:	Gate Drivers
Propagation Delay - Max:	70 ns
Rds On - Drain-Source Resistance:	4.4 mOhms
Factory Pack Quantity:	2500
Subcategory:	PMIC - Power Management ICs
Technology:	Si

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Datasheet

LMG3100R044VBER Datasheet

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CNHTS:: 8542391090
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

LMG3100R0x GaN FETs with Integrated Drivers

Texas Instruments LMG3100R0x Gallium Nitride (GaN) FETs with Integrated Drivers are 1.7mΩ GaN FETs and drivers with a high-side level shifter and bootstrap. Two LGM3100 devices can be used to form a half-bridge with no external level shifter required. The GaN FET and driver components feature built-in supply rail under-voltage lock-out (UVLO) protection and internal bootstrap supply voltage clamping capability to prevent overdrive (>5.4V). Texas Instruments LMG3100R0x offers low power consumption and an improved user interface. The LMG3100R017 is an ideal solution for high-frequency, high-efficiency applications, including buck-boost converters, LLC converters, solar inverters, telecom, motor drives, power tools, and Class D audio amplifiers.