C3M0160120D

Wolfspeed
941-C3M0160120D
C3M0160120D

Mfr.:

Description:
SiC MOSFETs SiC, MOSFET, 160mohm, 1200V, TO-247-3, Industrial

Datasheet:
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In Stock: 1,228

Stock:
1,228 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
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Ext. Price:
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Pricing (USD)

Qty. Unit Price
Ext. Price
$7.32 $7.32
$4.47 $44.70
$3.76 $451.20
$3.71 $1,892.10
$3.26 $8,215.20

Product Attribute Attribute Value Select Attribute
Wolfspeed
Product Category: SiC MOSFETs
RoHS:  
REACH - SVHC:
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
17 A
160 mOhms
- 8 V, + 19 V
3.6 V
38 nC
- 55 C
+ 150 C
97 W
Enhancement
Brand: Wolfspeed
Packaging: Tube
Product Type: SiC MOSFETS
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Unit Weight: 6 g
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CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

1200V Silicon Carbide Power MOSFETs

Wolfspeed  1200V Silicon Carbide Power MOSFETs set the standard for performance, ruggedness and ease of design. Wolfspeed MOSFETs feature fast switching and low switching loss capabilities, ensuring significant improvement in system efficiency, power density and overall BOM cost compared to silicon MOSFET and IGBT incumbents.

Silicon Carbide 1200V MOSFETs & Diodes

Wolfspeed Silicon Carbide (SiC) 1200V MOSFETs and Diodes create a powerful combination of higher efficiency in demanding applications. These MOSFETs and Schottky diodes are designed for high-power applications. The 1200V SiC MOSFETs feature stable Rds(on) over-temperature and avalanche ruggedness. These MOSFETs are rugged body diodes that do not require external diodes and are easier to drive as these offer a 15V gate drive. The 1200V SiC MOSFETs improve system-level efficiency, lower switching and conduction losses, and improve system-level power density.

Silicon Carbide (SiC) Schottky Diodes

Wolfspeed Silicon Carbide (SiC) Schottky Diodes are optimized for high-performance power electronics applications, including server power supplies, electric vehicle charging systems, energy storage systems, solar (PV) inverters, industrial power supplies, and consumer electronics. Compared to silicon-based solutions, Wolfspeed Silicon Carbide technology enables increased system power density, higher switching frequencies, smaller designs, cooler components, reduced size of components like inductors, capacitors, filters, and transformers, and overall cost benefits. Wolfspeed SiC diodes feature the MPS (Merged PiN Schottky) design, which is more robust and reliable than standard Schottky barrier diodes. Wolfspeed's portfolio of SiC Schottky diodes come in various packages to meet diverse application requirements.

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