Taiwan Semiconductor GaN FETs

Results: 4
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 Mfr.
Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Channel Mode
Taiwan Semiconductor GaN FETs 650V, 11A, PDFN56, E-mode GaN Transistor
Datasheet
2,993In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 3,000

SMD/SMT PDFN-6 N-Channel 1 Channel 650 V 11 A 190 mOhms - 7 V, + 7 V 2.6 V 2.2 nC - 55 C + 150 C Enhancement
Taiwan Semiconductor GaN FETs 650V, 11A, PDFN88, E-mode GaN Transistor
Datasheet
2,960In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 3,000

SMD/SMT PDFN-8 N-Channel 1 Channel 650 V 11 A 195 mOhms - 10 V, + 7 V 2.6 V 2.2 nC - 55 C + 150 C Enhancement
Taiwan Semiconductor GaN FETs 650V, 30A, PDFN88, E-mode GaN Transistor
Datasheet
Non-Stocked Lead-Time 30 Weeks
Min.: 9,000
Mult.: 3,000
Reel: 3,000

SMD/SMT PDFN-8 N-Channel 1 Channel 650 V 30 A 68 mOhms - 10 V, + 7 V 2.6 V 6.7 nC - 55 C + 150 C Enhancement
Taiwan Semiconductor GaN FETs 650V, 18A, PDFN88, E-mode GaN Transistor
Datasheet
Non-Stocked Lead-Time 30 Weeks
Min.: 9,000
Mult.: 3,000
Reel: 3,000

SMD/SMT PDFN-8 N-Channel 1 Channel 650 V 18 A 110 mOhms - 10 V, + 7 V 2.6 V 4 nC - 55 C + 150 C Enhancement