CoolSiC™ 400V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 400V G2 Silicon Carbide MOSFETs are ideally suited for hard- and resonant-switching topologies. The Infineon 400V CoolSiC MOSFETs were specially developed for use in the AC/DC stage of AI server Power Supply Units (PSUs) and are also ideal for applications such as solar and energy storage systems. CoolSiC MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation.

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Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
681In Stock
Min.: 1
Mult.: 1
Reel: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 400 V 68 A 36.5 mOhms - 10 V, + 25 V 4.5 V 36 nC - 55 C + 175 C 214 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
1,276In Stock
Min.: 1
Mult.: 1
Reel: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 400 V 111 A 19.1 mOhms - 10 V, + 25 V 4.5 V 62 nC - 55 C + 175 C 341 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
736In Stock
Min.: 1
Mult.: 1
Reel: 1,000

SMD/SMT N-Channel 1 Channel 400 V 133 A 14.4 mOhms 4.5 V 85 nC - 55 C + 175 C 429 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
943In Stock
Min.: 1
Mult.: 1
Reel: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 400 V 111 A 21.7 mOhms - 10 V, + 25 V 4.5 V - 55 C + 175 C 341 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
968In Stock
Min.: 1
Mult.: 1
Reel: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 400 V 50 A 52.5 mOhms - 10 V, + 25 V 4.5 V 26 nC - 55 C + 175 C 167 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
895In Stock
Min.: 1
Mult.: 1
Reel: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 400 V 43 A 64.5 mOhms - 10 V, + 25 V 4.5 V - 55 C + 175 C 150 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
996In Stock
Min.: 1
Mult.: 1
Reel: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 400 V 144 A 16.3 mOhms - 10 V, + 25 V 4.5 V 85 nC - 55 C + 175 C 429 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
1,444In Stock
Min.: 1
Mult.: 1
Reel: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 400 V 68 A 32.1 mOhms - 10 V, + 25 V 4.5 V 36 nC - 55 C + 175 C 214 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
1,950In Stock
Min.: 1
Mult.: 1
Reel: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 400 V 50 A 52.5 mOhms - 10 V, + 25 V 4.5 V 26 nC - 55 C + 175 C 167 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
1,850In Stock
Min.: 1
Mult.: 1
Reel: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 400 V 43 A 64.5 mOhms - 10 V, + 25 V 4.5 V 21 nC - 55 C + 175 C 150 W Enhancement