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IXFK120N30P3

Name: IXYS IXFK120N30P3
Brand: IXYS
SKU: 747-IXFK120N30P3
Price: 22.57 USD
Availability: OutOfStock

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Mouser No:

747-IXFK120N30P3

Mfr. No:

IXFK120N30P3

Mfr.:

IXYS

Description:

MOSFETs N-Channel: Power MOSFET w/Fast Diode

Datasheet:

IXFK120N30P3 Datasheet

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-264-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	300 V
Id - Continuous Drain Current:	120 A
Rds On - Drain-Source Resistance:	27 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	150 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.13 mW
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Product Type:	MOSFETs
Series:	IXFK120N30
Factory Pack Quantity:	25
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	10 g

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Datasheet

IXFK120N30P3 Datasheet

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Compliance Codes

CNHTS:: 8541210000
USHTS:: 8541290065
TARIC:: 8541500000
MXHTS:: 85415001
BRHTS:: 85415020
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Commercial & Tactical UAV Systems

Littelfuse Commercial and Tactical Unmanned Aerial Vehicle (UAV) Systems offer solutions for Li-Ion battery protection, battery chargers, and power distribution. These systems provide fuses for input protection/overcurrent protection, MOSFETs for semiconductor switching, and TVS diodes for DC output transient/surge protection. The commercial and tactical UAV systems offer battery protection >60V and provide main-pack fault isolation, battery disconnect/power path control (pre-charge support), and branch circuit overcurrent protection. Typical applications include Intelligence, Surveillance, and Reconnaissance (ISR), military, border surveillance, agriculture, delivery/logistics, inspection, and public safety.

Gen1 Trench Gate Power MOSFETs

IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low R_DS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.

Fuel-Powered/Hybrid Military UAV Systems

Littelfuse Fuel-Powered/Hybrid Military Unmanned Aerial Vehicle (UAV) Systems offer solutions for power conversion and DC bus, power distribution, and charger/ground power. These systems support power conversion and a DC bus with a rectifier diode that converts AC line voltage to DC. The fuel-powered/hybrid military Unmanned Aerial Vehicle (UAV) systems provide TVS diodes, fuses, and MOSFETs for semiconductor switches, surge protection, and rectification. These systems offer AEC-Q/MIL-grade products across various functions. Typical applications include Intelligence, Surveillance, and Reconnaissance (ISR), military, and border surveillance.

Drone Subsystems

Littelfuse Drone Subsystems offer solutions for USB-C PD and Li-ion battery chargers, battery pack systems, and BLDC motors. These subsystems offer fuses for various functions, including AC input overcurrent protection and fault isolation, protection of the battery and downstream controller, pack, wiring, and controller. The drone subsystems provide TVS diodes for primary-side switching transient suppression and cell monitor IC sense line input overvoltage protection. These subsystems are appropriate for various drones, including toy, camera, First-Person View (FPV), enterprise, industrial, Intelligence, Surveillance, and Reconnaissance (ISR), inspection/mapping, agriculture, and heavy lift. Typical applications include delivery/logistics, public safety, border surveillance, and military.

PolarP3™ HiPerFET™ Power MOSFETs

IXYS PolarP3™ HiPerFET™ Power MOSFETs are the latest addition to the benchmark high-performance Polar-Series for the product portfolio between 300V, 500V, and 600V. The high Figure of Merit (FOM), which is the multiplication of Q_g and R_DS(on), provides an excellent alternative to weaker super junction technologies. These PolarP3 HiPerFETs demonstrate up to a 12% reduction in on-state resistance (R_dson), a 14 percent reduction in gate charge (Q_g) and as high as a 20 percent increase in maximum power dissipation (P_d). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing the total power density of the device.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.