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IXGR50N60C2

Mouser No:

747-IXGR50N60C2

Mfr. No:

IXGR50N60C2

Mfr.:

IXYS

Description:

IGBTs 35 Amps 600V 2.5 V Rds

Lifecycle:

Obsolete

Datasheet:

IXGR50N60C2 Datasheet (PDF)

ECAD Model:

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Delivery Restriction:

Mouser does not presently sell this product in your region.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Package/Case:	ISOPLUS247-3
Mounting Style:	SMD/SMT
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	2.7 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Tube
Brand:	IXYS
Continuous Collector Current Ic Max:	75 A
Height:	21.34 mm
Length:	16.13 mm
Product Type:	IGBTs
Factory Pack Quantity:	30
Subcategory:	Transistors
Width:	5.21 mm
Unit Weight:	5.300 g

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Filter Document:

Datasheet

IXGR50N60C2 Datasheet (PDF)

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Not available
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

FEATURED PRODUCTS

IXYS

Offers a rated voltage of 650V, a current range of 35A to 220A, and a low gate charge.

XPT™ GenX5™ Trench IGBTs

5th gen Trench IGBTs with square Reverse Bias Safe Operating Areas and a 650V breakdown voltage.

IXGA20N250HV High Voltage IGBT

Square RBSOA, 10µs short circuit capability, and features 2500V V_CES, 12A I_C110, and 3.1V V_CE(sat).

IXBx14N300HV Reverse Conducting BiMOSFET™ IGBTs

3000V, 14A devices combining the strengths of MOSFETs and IGBTs.

IXYx110N120A4 1200V XPT™ GenX4™ Trench IGBTs

Offers an ultra-low V_sat designed for switching up to 5kHz.

Availability

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