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GTRB246608FC-V1-R2

MACOM

Mouser No:

941-GTRB246608FCV1R2

Mfr. No:

GTRB246608FC-V1-R2

Mfr.:

MACOM

Description:

GaN FETs 500W, 2300-2400MHz, 48V GaN HEMT (250pcs)

Lifecycle:

Factory Special Order:

Obtain a quote to verify the current price, lead-time and ordering requirements of the manufacturer.

Datasheet:

GTRB246608FC-V1-R2 Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
RoHS:
Technology:	GaN
Brand:	MACOM
Moisture Sensitive:	Yes
Packaging:	Reel
Product Type:	GaN FETs
Factory Pack Quantity:	250
Subcategory:	Transistors
Transistor Type:	GaN HEMT

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Datasheet

GTRB246608FC-V1-R2 Datasheet (PDF)

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Compliance Codes

USHTS:: 8541290055
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

FEATURED PRODUCTS

MACOM

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CGHV38375F 400W IM GaN on SiC Transistor

400W HPA matched to 50Ω at both input and output ports., 2.75GHz to 3.75GHz frequency.

5G RF JFETs & LDMOS FETs

Thermally enhanced high-power transistors for the next generation of wireless transmission.

GTVA High Power RF GaN on SiC HEMTs

50V RF transistors featuring input matching, high efficiency, and thermally enhanced packages.

Availability

Stock:: Non-Stocked, Call To Request a Quote

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