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STGWT15H60F

STMicroelectronics

Images are for reference only
See Product Specifications

Mouser No:

511-STGWT15H60F

Mfr. No:

STGWT15H60F

Mfr.:

STMicroelectronics

Description:

IGBTs PTD IGBT & IPM

Complete Your Design

Lifecycle:

Obsolete

Datasheet:

STGWT15H60F Datasheet (PDF)

ECAD Model:

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Delivery Restriction:

Mouser does not presently sell this product in your region.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Package/Case:	TO-3P
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.6 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	30 A
Pd - Power Dissipation:	115 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGWT15H60F
Packaging:	Tube
Brand:	STMicroelectronics
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBTs
Factory Pack Quantity:	300
Subcategory:	Transistors
Unit Weight:	5.500 g

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Filter Document:

Datasheet

STGWT15H60F Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Not available
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

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Availability

Stock:: An unexpected error occurred. Please try again later.

Similar Product

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Mfr. No:

STGW20H65FB

Description:

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Lifecycle:

End of Life: Scheduled for obsolescence and will be discontinued by the manufacturer.

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