SSM6K51xNU Silicon N-Channel MOSFETs

Toshiba SSM6K51xNU Silicon N-Channel MOSFETs are part of Toshiba's extensive portfolio of MOSFETs in various circuit configurations and packages. The devices feature high speed, high performance, low loss, low on-resistance, small packaging, and more. The Toshiba SSM6K51xNU MOSFETs are ideal for power management switches and feature high-speed switching. These devices have a 1.5V drive with low drain-source on-resistance.

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Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Packaging

Toshiba MOSFETs UDFN6B N-CH 30V 6A
Datasheet
5,046In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT UDFN-6B N-Channel 1 Channel 30 V 6 A 46 mOhms - 12 V, 20 V 2.5 V 2.5 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel

Toshiba MOSFETs 30V/20V Nch single MOSFET Id: 6A Rdson: 40mOhm @ 1.8V
Datasheet
4,135In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT UDFN-6B N-Channel 1 Channel 20 V 6 A 108 mOhms 8 V 1 V 3.6 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel

Toshiba MOSFETs UDFN6B N-CH 30V 6A
Datasheet
8,998Expected 2026/10/05
MouseReel Available
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT UDFN-6B N-Channel 1 Channel 30 V 6 A 39.1 mOhms - 8 V, 12 V 1 V 3.2 nC - 55 C + 150 C 1.25 W Enhancement Reel, Cut Tape, MouseReel