MXP075 MaxSiC® 750V N-Channel MOSFETs

Vishay Semiconductors MXP075 MaxSiC® 750V N-Channel MOSFETs feature a 750V drain-source voltage, fast switching speed, and 3μs short circuit withstand time. These MOSFETs also feature maximum power dissipation of 208W (Tc = 25°C) and continuous drain current of 51A (Tc = 25°C). The Vishay Semiconductors MXP075 MaxSiC 750V N-Channel MOSFETs are halogen-free and are available in the TO-247AD 4L package. Users design these MOSFETs into chargers, auxiliary motor drives, and DC-DC converters.

Results: 2
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 Mfr.
Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Vishay / Siliconix SiC MOSFETs 750-V N-CHANNEL SIC MOSFET
Datasheet
600Expected 2027/04/14
Min.: 1
Mult.: 1

Through Hole TO-247AD-4L 1 Channel 750 V 51 A 50 mOhms - 10 V, + 22 V 2.65 V 77 nC - 55 C + 175 C 208 W Enhancement
Vishay / Siliconix SiC MOSFETs 750-V N-CHANNEL SIC MOSFET
Datasheet
600Expected 2027/04/07
Min.: 1
Mult.: 1

Through Hole TO-247AD-4L 1 Channel 750 V 51 A 50 mOhms - 10 V, + 22 V 2.65 V 77 nC - 55 C + 175 C 208 W Enhancement