Results: 10
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode
ROHM Semiconductor SiC MOSFETs N-Ch 1200V SiC 31A 80mOhm TrenchMOS 1,034In Stock
$23.92
$14.89
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 31 A 104 mOhms - 4 V, + 22 V 5.6 V 60 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 1200V SiC 72A 30mOhm TrenchMOS 683In Stock
$77.84
$68.97
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 650V SiC 93A 22mOhm TrenchMOS 188In Stock
$56.18
$40.30
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 93 A 28.6 mOhms - 4 V, + 22 V 5.6 V 133 nC - 55 C + 175 C 339 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 650V SiC 70A 30mOhm TrenchMOS 84In Stock
$33.90
$21.96
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 650V SiC 39A 60mOhm TrenchMOS 1,069In Stock
$16.86
$9.43
$9.20
$9.19
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 650V SiC 21A 120mOhm TrenchMOS 394In Stock
$10.89
$5.92
$5.48
$5.38
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 21 A 156 mOhms - 4 V, + 22 V 5.6 V 38 nC + 175 C 103 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 650V 30A Silicon Carbide SiC 177In Stock
900Expected 2027/03/22
$13.58
$7.97
$7.28
$7.15
$7.12
Min.: 1
Mult.: 1
Through Hole TO-247N-3 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 1200V SiC 17A 160mOhm TrenchMOS
4,950On Order
$12.37
$6.69
$6.32
$6.00
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 103 W Enhancement
ROHM Semiconductor SiC MOSFETs 1700V 3.7A N-MOSFET Silicon Carbide SiC
2,220On Order
$9.40
$5.02
$4.62
$4.29
Min.: 1
Mult.: 1
Through Hole TO-3PFM-3 1 Channel 1.7 kV 3.7 A 1.5 Ohms - 6 V, + 22 V 4 V 14 nC - 55 C + 175 C 35 W Enhancement
ROHM Semiconductor SiC MOSFETs N-Ch 1200V SiC 55A 40mOhm TrenchMOS
446Expected 2027/02/08
$43.11
$30.21
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 55 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement