Back to Diodes Incorporated

Diodes Incorporated DMN601WKQ N-Channel Enhancement Mode MOSFET

Diodes Incorporated DMN601WKQ N-Channel Enhancement Mode MOSFETs are Electrostatic Discharge (ESD) protected with fast switching speed. These MOSFETs are low on-resistance (RDS(ON)), low threshold voltage, low input capacitance, and low input/output leakage. The moisture sensitivity of these MOSFETs is of level 1 as per J-STD-020 standard. The DMN601WKQ MOSFETs from Diodes Incorporated are qualified to AEC-Q101 standard and PPAP (Production Part Approval Process) capable. These MOSFETs are free from lead, antimony, and halogen and are available in the S0T323 package.

Features

  • Low on-resistance
  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • ESD protected gate
  • Lead-free
  • RoHS compliant
  • Halogen and Antimony free
  • Qualified to AEC-Q101 standards for high reliability
  • PPAP capable

DMN601WKQ N-Channel Enhancement Mode MOSFET Dimensions

Mechanical Drawing - Diodes Incorporated DMN601WKQ N-Channel Enhancement Mode MOSFET
Published: 2016-07-04 | Updated: 2022-03-11