Microsemi APT40SM120 SiC Power MOSFETs offer increased performance in high-voltage applications in comparison to silicon MOSFET/IGBT solutions. The APT40SM120 MOSFETs enable a lighter, more compact system making them highly efficient. The MOSFETs are simple to drive and easy to parallel. The devices eliminate the need for an external Free Wheeling Diode while providing improved thermal capabilities and lower switching losses. Features include superior avalanche ruggedness and fast switching speed due to low internal gate resistance (ESR). The APT40SM120 also provides stable operation at the high junction temperature of +175°C. The MOSFETs have a drain current of 32A (APT40SM120J) or 36A (APT40SM120S), 1200V breakdown voltage, and a maximum 100Ω on-state resistance. Applications include H/EV powertrain & EV charger, induction heating & welding, smart grid transmission & distribution, power supply & distribution, and PV inverter, converter & industrial motor drives.
Features
Fast and reliable body diode
Fast switching speed due to low internal gate resistance (ESR)
Low capacitances and low gate charge
Stable operation at high junction temperature, Tj(max) = +175°C
Superior avalanche ruggedness
Benefits
Eliminates the need of external Free Wheeling Diode
High efficiency to enable lighter/compact system
Improved thermal capabilities and lower switching losses
Lower system cost of ownership
Simple to drive and easy to parallel
Specifications
32A (APT40SM120J) or 36A (APT40SM120S) continuous drain current
1200V drain-source breakdown voltage
80mΩ drain-source resistance
-10V to + 25V gate-source voltage
100Ω maximum on-state resistance
-55°C to +175°C maximum operating temperature
Applications
H/EV powertrain and EV charger
Induction heating and welding
Power supply and distribution
PV inverter, converter, and industrial motor drives