onsemi NVHL110N65S3F 650V 30A SUPERFET® III Power MOSFET

onsemi NVHL110N65S3F 650V 30A SUPERFET® III Power MOSFET is a high-voltage AEC-Q101 qualified Super-Junction (SJ) MOSFET utilizing Charge Balance technology for outstanding low on-resistance and low gate charge performance. Charge Balance technology minimizes conduction loss, providing superior switching performance and enabling the ability to withstand extreme dV/dt rates. The NVHL110N65S3F SUPERFET III MOSFET is ideal for power systems requiring miniaturization and high efficiency. The NVHL110N65S3F also features optimized reverse recovery body diode performance, resulting in fewer required additional components and improved system reliability.

The NVHL110N65S3F SUPERFET III Power MOSFET is offered in a 3-lead TO-247 long-lead package. This device is Pb-free, RoHS-compliant, AEC-Q101 Qualified, and PPAP-capable, making it ideal for automotive applications.

Features

  • AEC-Q101 qualified and PPAP-capable
  • 700V at T= +150°C
  • 93mΩ typical RDS(on)
  • Ultra-low gate charge (typical Q= 58nC)
  • Low effective output capacitance (typical. Coss(eff.) = 553μF)
  • Excellent body diode performance (low Qrr, robust body diode)
  • Optimized capacitance
  • High system reliability at low-temperature operation
  • Low switching loss
  • High system reliability in LLC and phase shift full bridge circuit
  • Low peak Vds and low Vgs oscillation
  • 100% Avalanche tested
  • TO-247 long-lead package type
  • Pb-free and RoHS-compliant

Applications

  • Automotive onboard Chargers for HEV-EV
  • Automotive DC-DC converters for HEV-EV

Gate Charge Test Circuit

Application Circuit Diagram - onsemi NVHL110N65S3F 650V 30A SUPERFET® III Power MOSFET

Resistive Switching Test Circuit

Application Circuit Diagram - onsemi NVHL110N65S3F 650V 30A SUPERFET® III Power MOSFET

Inductive Switching Test Circuit

Application Circuit Diagram - onsemi NVHL110N65S3F 650V 30A SUPERFET® III Power MOSFET
Published: 2019-02-28 | Updated: 2024-01-25