onsemi NVMTS1D1N08X N‐Channel Power MOSFETs
onsemi NVMTS1D1N08X N-Channel Power MOSFETs provide high-current switching for automotive power conversion and motor control applications. The MOSFETs combine low on-resistance with low gate charge and capacitance to minimize conduction and driver losses. A low-reverse-recovery-charge body diode with soft recovery supports efficient switching in demanding power systems.
The onsemi NVMTS1D1N08X MOSFETs are designed for synchronous rectification in AC-DC and DC-DC converters, primary switching in isolated DC-DC converters, motor drives, and automotive 48V systems. AEC-Q101 qualification, PPAP capability, and 100% avalanche testing support automotive-grade reliability. The compact PQFN88-3L package enables high power density and efficient thermal performance.
Features
- Low RDS(on) to minimize conduction losses
- Low gate charge and capacitance to minimize driver losses
- Low reverse-recovery charge with soft-recovery body diode
- 100% avalanche-tested design
- AEC-Q101 qualification and PPAP capability
- Pb-free, halogen-free, BFR-free, and RoHS-compliant
Applications
- Synchronous rectification in DC-DC converters
- Synchronous rectification in AC-DC converters
- Motor drives
- Primary switching in isolated DC-DC converters
- Automotive 48V systems
Specifications
- Drain-source voltage of 80V
- Maximum drain-source on-resistance of 1.0mΩ at VGS = 10V and ID = 32A
- Continuous drain current of 352A at TC = 25°C
- Continuous drain current of 249A at TC = 100°C
- Pulsed drain current of 2059A
- Continuous body-diode current of 346A at TC = 25°C
- Gate-source voltage of 20V
- Gate threshold voltage range of 2.4V to 3.6V
- Maximum power dissipation of 250W at TC = 25°C
- Single-pulse avalanche energy of 500mJ
- Total gate charge of 121nC typical
- Output charge of 178nC typical
- Reverse-recovery charge of 316nC, typical
- Reverse-recovery time of 34ns, typical
- Switching times
- Turn-on delay time of 35ns, typical
- Rise time of 24ns typical
- Turn-off delay time of 65ns typical
- Fall time of 13ns typical
- Thermal resistance
- Junction-to-case thermal resistance of 0.3°C/W typical and 0.6°C/W maximum
- Junction-to-ambient thermal resistance of 30°C/W maximum
- Operating junction and storage temperature range of -55°C to +175°C
- PQFN88-3L single-cooled package
Package Style
