PANJIT 150V N-Channel Enhancement-Mode MOSFETs
PANJIT 150V N-Channel Enhancement-Mode MOSFETs are designed with high-speed switching and operate from 4A to 125A continuous drain current. These enhancement-mode MOSFETs are non-automotive devices that operate from -55°C to 175°C junction and storage temperature range. The 150V N-channel MOSFETs are 100% avalanche tested and 100% Rg tested. These N-channel MOSFETs are lead-free in compliance with EU RoHS 2.0. The 150V N-channel MOSFETs are ideal for Battery Management Systems (BMS), Brushless Direct Current (BLDC), and Switch Mode Power Supplies (SMPS).
Features
- High switching speed
- Low drain resistance
- 100% avalanche tested
- Non-automotive devices
- 100% Rg tested
- -55°C to 175°C junction and storage temperature range
- Green molding compound as per IEC 61249 standard
- Lead-free in compliance with EU RoHS 2.0
Applications
- Battery Management System (BMS)
- Brushless Direct Current (BLDC)
- Switch Mode Power Supply (SMPS) SR
Associated Products
PANJIT 150V N-Channel Automotive MOSFETs
Optimized to have excellent FOM and AEC-Q101 qualified with standard-level gate drive.
View Results ( 6 ) Page
| Part Number | Datasheet | Package/Case | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Qg - Gate Charge | Pd - Power Dissipation | Rise Time | Typical Turn-Off Delay Time | Typical Turn-On Delay Time |
|---|---|---|---|---|---|---|---|---|---|---|
| PJL9580_R2_00201 |  |
SOP-8 | 9 A | 54 mOhms | - 20 V, 20 V | 22 nC | 10.4 W | 14 ns | 17 ns | 8.4 ns |
| PSMP075N15NS1_T0_00601 | |
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| PJD30N15_L2_00001 | |
TO-252AA-3 | 25 A | 90 mOhms | - 25 V, 25 V | 29.5 nC | 102 W | 21 ns | 32 ns | 14 ns |
| PJD40N15_L2_00001 | |
TO-252AA-3 | 40 A | 35 mOhms | - 20 V, 20 V | 52 nC | 131 W | 100 ns | 35 ns | 17 ns |
| PJQ5494_R2_00001 | |
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| PJL9480_R2_00001 | |
SOP-8 | 4 A | 85 mOhms | - 25 V, 25 V | 29.5 nC | 2.5 W | 21 ns | 32 ns | 14 ns |
Published: 2024-08-05
| Updated: 2024-08-29