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ROHM Semiconductor HP8K/HT8K Dual Channel Enhancement Mode MOSFETs

ROHM Semiconductor HP8K/HT8K Dual Channel Enhancement Mode MOSFETs offer dual N-channel or N-channel/P-channel transistor polarity. The HP8K and HT8K MOSFETs are available in small, surface-mount HSMT8 and HSOP8 backside heat-dissipating dual packages that provide low on-resistances and energy savings. Applications include single-/three-phase brushless motor drives or switching operations.

Features

  • Low on-resistances
  • Small HSMT8 and HSOP8 surface mount packages
  • High power
  • Si technology
  • Lead-free plating
  • Halogen-free and RoHS compliant

Applications

  • Switching
  • Motor drives

Specifications

  • 100V drain-source voltage
  • ±2.5A to ±24A continuous drain current range
  • ±10A to ±40A pulsed drain current range
  • ±20V gate-source voltage
  • 2.5V gate-source threshold voltage
  • 2.5A to 10.0A avalanche current range, single pulse
  • 0.45mJ to 8.0mJ avalanche energy range, single pulse
  • 2W to 26W power dissipation range
  • 1.9Ω to 17Ω gate resistance range
  • 1.6S to 9S minimum forward transfer admittance range
  • 27.8mΩ to 303mΩ on-drain-source resistance range
  • 2.9nC to 19.8nC gate charge range
  • Typical capacitance
    • 90pF, 305pF, or 1100pF input options
    • 25pF, 80pF, or 215pF output options
    • 4pF, 6pF, or 12pF reverse transfer options
  • Typical delay time ranges
    • 6ns to 15ns turn-on range
    • 13ns to 98ns turn-off range
  • 6ns to 22ns rise time range
  • 5ns to 50ns fall time range
  • -55°C to +150°C operating junction temperature range

Infographics

Infographic - ROHM Semiconductor HP8K/HT8K Dual Channel Enhancement Mode MOSFETs
Infographic - ROHM Semiconductor HP8K/HT8K Dual Channel Enhancement Mode MOSFETs
Published: 2023-08-15 | Updated: 2025-01-09