ROHM Semiconductor RFNxRSM2S Ultra Fast Recovery Diodes
ROHM Semiconductor RFNxRSM2S Ultra Fast Recovery Diodes are silicon epitaxial planar diodes with low forward voltage and low switching loss. These ultra-fast diodes feature a 200V peak reverse voltage and a storage temperature range of -55°C to 175°C. The RFNxRSM2S ultra-fast recovery diodes provide high current overload capacity. These diodes come in a TO-277A package. The RFNxRSM2S ultra-fast recovery diodes are RoHS-compliant and ideal for general rectification applications.
Features
- Silicon epitaxial planar structure type
- 200V peak reverse voltage
- Low forward voltage
- Low switching loss
- High current overload capacity
Applications
- General rectification
View Results ( 6 ) Page
| Part Number | Datasheet | Max Surge Current | If - Forward Current | Recovery Time | Ir - Reverse Current | Vf - Forward Voltage |
|---|---|---|---|---|---|---|
| RFN4RSM2STFTL1 |  |
80 A | 4 A | 36 ns | 1 uA | 930 mV |
| RFN4RSM2STL1 | |
80 A | 4 A | 36 ns | 1 uA | 930 mV |
| RFN6RSM2STFTL1 | |
80 A | 6 A | 38 ns | 1 uA | 930 mV |
| RFN6RSM2STL1 | |
80 A | 6 A | 38 ns | 1 uA | 930 mV |
| RFN10RSM2STFTL1 | |
130 A | 10 A | 25 ns | 1 uA | 960 mV |
| RFN10RSM2STL1 | |
130 A | 10 A | 25 ns | 1 uA | 960 mV |
Published: 2024-05-22
| Updated: 2024-06-11