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ROHM Semiconductor RS4P063BPHZG Wide-SOA N-Channel Power MOSFET

ROHM Semiconductor RS4P063BPHZG Wide Safe Operating Area (Wide-SOA) N-Channel Power MOSFET is engineered for automotive safety and protection circuits that must withstand short-duration high-current and high-voltage stress. The MOSFET features an expanded Safe Operating Area that helps suppress secondary breakdown, improving reliability in critical applications.

This AEC-Q101 qualified device features a 100V drain-source voltage rating, 170A drain current capability, and a low 4.9mΩ typical RDS(on) to reduce conduction losses. The 100% avalanche-tested ROHm Semiconductor MOSFET is ideal for airbag inflator ignition, seat belt pretensioner, battery disconnect pyrofuse, and other automotive functional safety circuits.

Features

  • Wide-SOA design for improved robustness under high-current and high-voltage stress conditions
  • Low 4.9mΩ typical RDS(on) for reduced conduction losses and improved efficiency
  • AEC-Q101 qualified for automotive applications
  • 100% avalanche tested to ensure device ruggedness and reliability
  • Surface-mount HPLF5060T5LSAH package measuring approximately 6.0mm × 4.9mm × 1.2mm
  • RoHS-compliant

Applications

  • Airbag inflator ignition circuit drivers
  • Seat belt pretensioner drivers
  • Battery disconnect pyrofuse drivers
  • Other automotive protection and functional safety circuits

Specifications

  • 100V minimum drain-source voltage
  • 58.4mV/°C typical breakdown voltage temperature coefficient
  • ±170A maximum continuous drain current
  • 10V drive voltage
  • 384W maximum power dissipation
  • 55nC typical total gate charge
  • 70ns typical reverse recovery time
  • 1μA maximum zero gate voltage drain current
  • ±500nA maximum gate-source leakage current
  • 2.0V to 4.0V gate threshold voltage
  • -5.6mV/°C typical gate threshold voltage temperature coefficient
  • 6.3mΩ maximum static drain-source on-state resistance, 4.9mΩ typical
  • 1.9Ω typical gate resistance
  • 7.1S minimum forward transfer admittance
  • -55°C to +175°C operating junction temperature range
  • Thermal resistance
    • 0.39°C/W maximum junction-to-case
    • 19.9°C/W typical junction-to-ambient

Inner Circuit

Mechanical Drawing - ROHM Semiconductor RS4P063BPHZG Wide-SOA N-Channel Power MOSFET
Published: 2026-10-15 | Updated: 2026-10-23