New Discrete Semiconductors

IXYS IXSH65N120L3KHV SiC MOSFET
IXYS IXSH65N120L3KHV SiC MOSFET is a 3rd-generation 1200V SiC MOSFET designed for high-efficiency power conversion and fast-switching applications. This MOSFET offers a continuous drain current of 67A and a low RDS(on) of 35mΩ (typical), enabling reduced conduction losses and improved system efficiency. The IXSH65N120L3KHV MOSFET features high blocking voltage capability, low capacitance, and an ultra-fast intrinsic body diode for superior switching performance. The Kelvin source connection helps minimize switching losses and improve gate-drive control. The IXSH65N120L3KHV SiC MOSFET is well-suited for demanding applications like EV charging infrastructure, motor drives, DC/DC converters, solar inverters, and switch-mode power supplies.