New JFETs
Texas Instruments JFE2325 Dual Low-Power N-Channel JFET is a monolithic, matched-pair discrete JFET intended for use with very high-impedance sensors such as electret condenser microphones (ECMs). The device consists of two N-channel JFETs, laid out for excellent matching on a single die. The gate of each JFET is biased by an integrated diode, allowing direct coupling of a signal source to the gate without a biasing resistor. The JFE2325 achieves a much higher input impedance (> 400GΩ) than would be possible with discrete resistors used to bias the gate. Furthermore, the JFE2325 features an extremely low input capacitance of 0.85pF per JFET, which maximizes signal levels from transducers with very low output capacitance.
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Texas Instruments JFE2325 Dual Low-Power N-Channel JFETIntended for use with very high-impedance sensors such as electret condenser microphones (ECMs).9/9/2026
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onsemi TF412 N-Channel JFETDesigned for low-frequency general-purpose amplifiers and impedance converter applications.3/5/2025 -
onsemi Combo-FETsDevices that combine a low RDS(on) SiC JFET with a Si MOSFET in a single, compact package.11/26/2024 -
InterFET IFN201 & IFN202 N-Channel 40V Low Ciss JFETsFeature low gate leakage, low input capacitance (Ciss), and high radiation tolerance.10/28/2024 -
InterFET IFN160 N-Channel 50V Low Ciss JFETsFeature low gate leakage, low cutoff voltage and low input capacitance (Ciss).10/28/2024 -
onsemi UJ4N 750V 4.3mΩ Normally On SiC JFET TransistorThis JFET exhibits ultra-low on resistance (RDS(on)) in a compact TOLL package.10/24/2024 -
onsemi UG4SC 750V 8.4mΩ Combo-FETsCombines a 750V SiC JFET and a low-voltage Si MOSFET in a single TO-247-4L package.10/7/2024 -
onsemi UF3N120007K4S 1200V JFET N-Channel TransistorThis device exhibits ultra-low on-resistance [RDS(ON)] in a TO247-4 package.9/19/2024 -
Linear Integrated Systems Low Noise Dual N-Channel JFETsWideband, high gain, monolithic dual, N-channel JFETs that are pin-for-pin replacements.9/21/2023