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Texas Instruments LM5109B/LM5109B-Q1 Half Bridge Gate Drivers

Texas Instruments LM5109B/LM5109B-Q1 Half Bridge Gate Drivers are cost-effective, high-voltage gate drivers designed to drive both the high-side and the low-side N-Channel MOSFETs. This can be done in a synchronous buck or a half bridge configuration. The floating high-side drivers are capable of working with rail voltages up to 90V. The outputs are independently controlled with TTL/CMOS compatible logic input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean-level transitions from the control input logic to the high-side gate drivers. Under-voltage lockout is provided on both the low-side and the high-side power rails.

Features

  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1
    • Device HBM ESD classification level 1C
    • Device CDM ESD classification level C4A
  • Drives both a high-side and low-side N-channel MOSFET
  • 1A peak output current (1A sink/1A source)
  • Independent TTL/CMOS compatible inputs
  • Bootstrap supply voltage to 108VDC
  • Fast propagation times (30ns typical)
  • Drives 1000pF load with 15ns rise and fall times
  • Excellent propagation delay matching (2ns typical)
  • Supply rail under-voltage lockout
  • Low-power consumption
  • Thermally-enhanced WSON-8 package

Applications

  • Push-pull converters
  • Half and full-bridge power converters
  • Solid-state motor drives
  • Two switch forward power converters

Application Notes

Published: 2016-01-12 | Updated: 2025-08-01