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Texas Instruments SN74LVC1G135B-Q1 Single 2-Input NAND Gate

Texas Instruments SN74LVC1G135B-Q1 Single 2-Input NAND Gate is an automotive device with Schmitt-trigger inputs and open-drain outputs. This device's open-drain outputs support 5.5V independent of VCC. The SN74LVC1G135B-Q1 device operates over a 1.1V to 5.5V voltage range and a -40°C to +125°C temperature range. This NAND gate features Schmitt-trigger inputs for improved noise immunity and cleaner signal transitions. The SN74LVC1G135B-Q1 NAND gate supports partial power-down with back-drive protection (Ioff). The SN74LVC1G135B-Q1 single 2-input NAND gate devices are AEC-Q100 qualified for automotive applications. Typical applications include combining power-good signals and enable signals.

Features

  • AEC-Q100 qualified for automotive applications:
    • -40°C to +125°C device temperature grade 1
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 1.1V to 5.5V operating voltage range
  • Over-voltage tolerant inputs support up to 5.5V independent of VCC
  • Open-drain outputs support 5.5V independent of VCC
  • Supports partial-power-down with back drive protection (Ioff)
  • High open-drain output drive strength:
    • 32mA at 5V
    • 24mA at 3.3V
    • 8mA at 2.5V
    • 4mA at 1.8V
  • 4.8ns maximum propagation delay
  • Latch-up performance exceeds 100mA per JESD78 and AEC-Q100-004

Applications

  • Combine power good signals
  • Combine enable signals

Logic Diagram

Block Diagram - Texas Instruments SN74LVC1G135B-Q1 Single 2-Input NAND Gate

Application Diagram

Application Circuit Diagram - Texas Instruments SN74LVC1G135B-Q1 Single 2-Input NAND Gate
Published: 2026-10-26 | Updated: 2026-10-27