Mouser Now Stocking GaN Systems HD Half-Bridge Bipolar Driver Switch Eval Board

May 26, 2022 – Mouser Electronics, Inc., the industry's leading New Product Introduction (NPI) distributor with the widest selection of semiconductors and electronic components™, is now stocking the GS-EVB-HB-0650603B-HD half-bridge bipolar driver switch evaluation board from GaN Systems. This compact gallium nitride (GaN) enhancement-mode (e-mode) half-bridge evaluation board packs some notable features while reducing the overall number of components and saving valuable board space.

The GaN Systems GS-EVB-HB-0650603B-HD board, available from Mouser Electronics, features two HEY1011-L12C GaN FET drivers and two 650 V, 60 A GaN e-mode transistors arranged in a half-bridge configuration. The HEY1011 is an isolated gate driver optimized for driving GaN FETs with fast propagation delay and high peak source/sink capability for use in high-frequency applications that require isolation, level-shifting or ground separation for noise immunity. Since the HEY1011 driver does not need secondary side power or bootstrap components, it frees up valuable board space and makes for a more cost-effective design.

To help alleviate the effects of gate-drain capacitor currents, the GS-EVB-HB-0650603B-HD uses a bipolar gate drive arrangement. The board can perform double pulse tests or connect a half-bridge to an existing LC power segment. The double pulse test is safely used to evaluate the switching characteristics of a power switch under hard switching conditions.

GaN Systems’ GS-EVB-HB-0650603B-HD half-bridge bipolar driver switch evaluation board is ideal for designers looking to develop high-power wireless chargers, industrial inverters, motor drive/VFDs, data centers, residential energy storage systems, and other power electronics-based applications.

To learn more, visit https://www.mouser.com/new/gan-systems/gan-systems-gs-evb-hb-0650603b-hd-eval-board/.

 

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2026 - GaN Systems provides a range of Gallium Nitride high power transistors for consumer, datacenter, industrial and transportation power conversion applications. Featuring exceptionally low on-resistance and negligible charge storage, these devices enable switching efficiencies well in excess of current silicon based solutions and offer dramatic benefits to switching power supply designs, inverters, hybrid and electric vehicles, battery management and power factor correction.

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