onsemi NVXK2TR80WDT Silicon Carbide (SiC) Module
onsemi NVXK2TR80WDT Silicon Carbide (SiC) Module is a 1200V, 80mΩ, and 20A dual half-bridge EliteSiC power module housed in a APM32 Dual Inline Package (DIP). This SiC module is compactly designed to have a low total module resistance. The NVXK2TR80WDT power module is automotive-qualified per AEC-Q101 and AQG324. This power module is lead-free, ROHS, and UL94V-0 compliant. The NVXK2TR80WDT EliteSiC MOSFET module is ideally used in HV DC-DC and onboard chargers in xEV applications.
Features
- DIP Silicon Carbide (SiC) dual half-bridge power module
- 1200V drain to source voltage (VDSS)
- 20A continuous drain current (ID)
- 80mΩ (typical) drain to source on-resistance (RDS(ON))
- -40°C to 175°C operating Junction temperature (TJ) range
- Creepage and clearance per IEC60664-1 and IEC 60950-1
- Compact design for low total module resistance
- Module serialization for full traceability
- Lead-free
- ROHS and UL94V-0 compliant
- Automotive qualified per AEC-Q101 and AQG324
Applications
- HV DC/DC and on-board charger for EV-PHEV
- 11kW to 22kW on-board charger for EV-PHEV
SiC MOSFET Half-Bridge Module
Related Modules
onsemi NVXK2TR40WXT Silicon Carbide (SiC) Module
1200V, 40mΩ, and 27A dual half-bridge EliteSiC power module, housed in a Dual-Inline Package (DIP).
onsemi NVXK2PR80WXT2 Silicon Carbide (SiC) Module
1200V, 80mΩ, and 31A full-bridge power module, housed in a Dual Inline Package (DIP).
onsemi NVXK2VR40WXT2 Silicon Carbide (SiC) Module
1200V, 40mΩ, and 55A 3-phase bridge power module, housed in a Dual Inline Package (DIP).
onsemi NVXK2VR80WxT2 Silicon Carbide (SiC) Modules
1200V, 80mΩ 3-phase bridge power modules, housed in a Dual Inline Package (DIP).
Published: 2024-08-02
| Updated: 2024-08-28