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Qorvo TGS2355 High Power GaN Switch

Qorvo TGS2355 High Power GaN Switch is a single-pole, double-throw (SPDT) reflective switch fabricated on Qorvo's 00.25µm GaN (Gallium Nitride) on SiC (Silicon Carbide) production process (QGaN25). Operating from 0.5GHz to 6.0GHz, the TGS2355 provides up to 100W input power handling with <1dB insertion over most of the operating band and greater than 40dB isolation.

The Qorvo TGS2355 High Power GaN Switch is offered in a compact 2.14mm x 2.50mm bare die and requires very little control current allowing for easy system integration without impacting system power budgets. The TGS2355 is ideally suited for high power switching applications across both defense and commercial applications.

Features

  • 0.5GHz to 6GHz frequency range
  • <50ns switching speed
  • 40dB isolation
  • <1.3dB insertion loss
  • 0V/-40V control voltage from either side of the MMIC
  • 100W power handling
  • Reflective switch
  • -40°C to +85°C operating temperature range
  • 2.14mm x 2.50mm x 0.1mm bare die
  • Halogen free, Pb-free, and RoHS compliant

Applications

  • Commercial and military radar
  • Communications
  • Electronic warfare
  • Test instruments
  • General purpose
  • High power switching

Related Products

Qorvo TGS2355-SM High Power GaN Switch

Provides 100W input power handling with <1.1dB insertion loss, in a 5.0mm x 5.0mm QFN32 package.

Learn Moreabout Qorvo TGS2355-SM High Power GaN Switch View Productsrelated to Qorvo TGS2355-SM High Power GaN Switch

Block Diagram

Qorvo TGS2355 High Power GaN Switch

Package Outline

Mechanical Drawing - Qorvo TGS2355 High Power GaN Switch
Published: 2015-03-18 | Updated: 2022-03-11