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PJD70P03E-AU_L2_006A1

Name: Panjit PJD70P03E-AU_L2_006A1
Brand: Panjit
SKU: 241-PJD70P03EAUL26A1
Price: 1.12 USD
Availability: InStock

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Mouser No:

241-PJD70P03EAUL26A1

Mfr. No:

PJD70P03E-AU_L2_006A1

Mfr.:

Panjit

Description:

MOSFETs 30V P-Channel Enhancement Mode MOSFET

Datasheet:

PJD70P03E-AU_L2_006A1 Datasheet (PDF)

ECAD Model:

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Learn more about Panjit PJD70P03E-AU_L2_006A1

In Stock: 2,537

Stock:: 2,537 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$1.12	$1.12
	$0.701	$7.01
	$0.60	$60.00
Full Reel (Order in multiples of 3000)
	$0.60	$1,800.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Panjit
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252AA-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	77 A
Rds On - Drain-Source Resistance:	13.5 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	54 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	79 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Panjit
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	21 ns
Product Type:	MOSFETs
Rise Time:	9 ns
Series:	PJD
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P Channel
Typical Turn-Off Delay Time:	37 ns
Typical Turn-On Delay Time:	11 ns
Unit Weight:	297 mg

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Datasheet

PJD70P03E-AU_L2_006A1 Datasheet (PDF)

PCN

Product Change Notification 2025-1-17 (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

PJDx0P03E-AU P-Channel Enhancement Mode MOSFETs

PANJIT PJDx0P03E-AU P-Channel Enhancement Mode MOSFETs are rugged and reliable MOSFETs with -30V drain-source voltage, ±25V gate-source voltage, and 3W power dissipation @T_C=25°C. These MOSFETs feature a 50°C/W junction to ambient thermal resistance, -55°C to 175°C operating temperature range, and -2.5V maximum gate-threshold voltage. The PJDx0P03E-AU MOSFETs are AEC-Q101 qualified, 100% UIS tested, and lead-free in compliance with EU RoHS 2.0.

30V & 40V Automotive P-Channel MOSFETs

PANJIT 30V and 40V Automotive P-Channel MOSFETs are AEC-Q101 qualified MOSFETs with an ON resistance of 1Ω and a high junction temperature of 175°C. These P-channel MOSFETs are an ideal choice for automotive design engineers looking to simplify circuitry and enhance performance. The 30V to 40V P-channel MOSFETs are lead-free and EU RoHS 2.0 compliant. These P-channel MOSFETs are available in various packages, including DFN3333-8L, DFN5060-8L, DFN5060B-8L, TO-252AA, TO-263AB, and TO-263-7L. The 30V to 40V P-channel MOSFETs are 100% Unclamped Inductive Switching (UIS) tested. Typical applications include reverse polarity protection, battery-powered equipment, brushed DC motors, electronic steering, oil/water pumps, and primary 12V systems.