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In Stock

RoHS

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NTMFS4D7N04XMT1G

Name: onsemi NTMFS4D7N04XMT1G
Brand: onsemi
SKU: 863-NTMFS4D7N04XMT1G
Price: 0.95 USD
Availability: InStock

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Mouser No:

863-NTMFS4D7N04XMT1G

Mfr. No:

NTMFS4D7N04XMT1G

Mfr.:

onsemi

Description:

MOSFETs 40V T10M IN S08FL PACKAGE

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NTMFS4D7N04XMT1G Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTMFS4D7N04XMT1G

In Stock: 1,050

Stock:: 1,050 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$0.95	$0.95
	$0.59	$5.90
	$0.385	$38.50
	$0.297	$148.50
	$0.254	$254.00
Full Reel (Order in multiples of 1500)
	$0.233	$349.50
	$0.208	$624.00
	$0.195	$1,755.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	66 A
Rds On - Drain-Source Resistance:	4.7 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	10.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	38 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	3.81 ns
Forward Transconductance - Min:	45.5 S
Product Type:	MOSFETs
Rise Time:	4.13 ns
Series:	NTMFS4D7N04XM
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	16.3 ns
Typical Turn-On Delay Time:	12 ns

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Datasheet

NTMFS4D7N04XMT1G Datasheet

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Single N-Channel Power MOSFETs

onsemi Single N-Channel Power MOSFETs are designed for compact and efficient designs with a small footprint. These power MOSFETs feature low R_DS(ON), low Q_G, and capacitance, which minimize conduction and driver losses. These MOSFETs are available in 40V, 60V, and 80V drain-to-source voltages and a ±20V gate-to-source voltage. The onsemi Single N-Channel Power MOSFETs are Pb-free and RoHS compliant.