GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.

Results: 32
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Minimum Operating Temperature Maximum Operating Temperature Maximum Operating Frequency Minimum Operating Frequency Technology
MACOM GaN FETs GaN HEMT Die DC-6.0GHz, 60 Watt

SMD/SMT Die N-Channel 4 Channel 120 V 6 A 250 mOhms - 3 V 6 GHz 4 GHz GaN
MACOM GaN FETs GaN HEMT Die DC-18GHz, 70 Watt

SMD/SMT Die N-Channel 1 Channel 100 V 6 A 200 mOhms - 3 V + 225 C 18 GHz 10 MHz GaN
MACOM GaN FETs GaN HEMT Die DC-4.0GHz, 320 Watt

SMD/SMT Die N-Channel 50 V 4 GHz 0 Hz GaN
MACOM GaN FETs GaN HEMT Die DC-18GHz, 25 Watt

SMD/SMT Die N-Channel 4 Channel 100 V 2 A 600 mOhms - 3 V 18 GHz 10 MHz GaN
MACOM GaN FETs GaN HEMT 2.9-3.5GHz, 150 Watt
17In Stock
Min.: 1
Mult.: 1

Screw Mount 440193 N-Channel 150 V 12 A - 3 V - 40 C + 150 C 3.5 GHz 3.1 GHz GaN
MACOM GaN FETs GaN HEMT DC-6.0GHz, 6 Watt 617In Stock
320Expected 2026/08/26
Min.: 1
Mult.: 1

SMD/SMT 440109 N-Channel 120 V 750 mA - 3 V - 40 C + 150 C 6 GHz 2 GHz GaN
MACOM GaN FETs GaN HEMT DC-6.0GHz, 6 Watt 896In Stock
1,800On Order
Min.: 1
Mult.: 1
: 200

SMD/SMT QFN-6 N-Channel 120 V 750 mA - 3 V - 40 C + 150 C 6 GHz 2 GHz GaN
MACOM GaN FETs GaN HEMT DC-6.0GHz, 10 Watt 2,271In Stock
Min.: 1
Mult.: 1

Screw Mount 440166 N-Channel 120 V 1.5 A - 3 V - 40 C + 150 C 6 GHz 2 GHz GaN
MACOM GaN FETs GaN HEMT DC-6.0GHz, 25 Watt 767In Stock
Min.: 1
Mult.: 1

Screw Mount 440166 N-Channel 120 V 3 A - 3 V - 40 C + 150 C 6 GHz 2 GHz GaN
MACOM GaN FETs GaN HEMT DC-4.0GHz, 45 Watt 87In Stock
Min.: 1
Mult.: 1

Screw Mount 440193 N-Channel 120 V 6 A - 3 V - 40 C + 150 C 4 GHz 2 GHz GaN
MACOM GaN FETs GaN HEMT DC-2.5GHz, 120 Watt 96In Stock
175On Order
Min.: 1
Mult.: 1

Screw Mount 440193 N-Channel 120 V 12 A - 3 V - 40 C + 150 C 2.5 GHz 1 GHz GaN
MACOM GaN FETs GaN HEMT 4.5-6.0GHz, 10 Watt 141In Stock
Min.: 1
Mult.: 1

Screw Mount 440166 N-Channel 120 V 1.5 A - 3 V - 40 C + 150 C 6 GHz 4.5 GHz GaN
MACOM GaN FETs GaN HEMT Die DC-6.0GHz, 8 Watt 570In Stock
Min.: 10
Mult.: 10

SMD/SMT Die N-Channel 120 V 750 mA 1.6 Ohms - 3 V 6 GHz 4 GHz GaN
MACOM GaN FETs GaN HEMT DC-4.0GHz, 100 Watt 47In Stock
225Expected 2026/10/16
Min.: 1
Mult.: 1

Screw Mount 440193 N-Channel 150 V 8.7 A 2.3 V - 40 C + 150 C 2.5 GHz 500 MHz GaN
MACOM GaN FETs GaN HEMT 5.2-5.9GHz, 350 Watt 4In Stock
10Expected 2026/08/28
Min.: 1
Mult.: 1

SMD/SMT 1 Channel 125 V - 3 V - 40 C + 85 C 5.9 GHz 5.2 GHz GaN
MACOM GaN FETs GaN HEMT DC-4.0GHz, 35 Watt 5In Stock
752On Order
Min.: 1
Mult.: 1

Screw Mount 440193 N-Channel 120 V 4.5 A - 3 V - 40 C + 150 C 4 GHz 2 GHz GaN
MACOM GaN FETs GaN HEMT DC-2.5GHz, 180 Watt
21Expected 2026/09/25
Min.: 1
Mult.: 1

Screw Mount 440199 N-Channel 2 Channel 120 V 24 A - 3 V - 40 C + 150 C 2.5 GHz 1 GHz GaN
MACOM GaN FETs GaN HEMT DC-18GHz, 6 Watt
750Expected 2026/09/15
Min.: 1
Mult.: 1
: 250

SMD/SMT DFN-12 N-Channel 100 V 950 mA - 3 V - 40 C + 150 C 18 GHz 0 Hz GaN
MACOM GaN FETs GaN HEMT DC-6.0GHz, 30 Watt
668Expected 2026/08/28
Min.: 1
Mult.: 1

Screw Mount 440166 N-Channel 100 V 4.2 A 2.3 V - 40 C + 150 C 1.4 GHz 960 MHz GaN
MACOM GaN FETs GaN HEMT DC-2.5GHz, 90 Watt Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Screw Mount 440199 N-Channel 2 Channel 120 V 12 A - 3 V - 40 C + 150 C 2.5 GHz 500 MHz GaN
MACOM GaN FETs GaN HEMT Die DC-6.0GHz, 15 Watt Non-Stocked Lead-Time 26 Weeks
Min.: 100
Mult.: 10

SMD/SMT Die N-Channel 120 V 1.5 A 1 Ohms - 3 V 6 GHz 4 GHz GaN
MACOM GaN FETs GaN HEMT Die DC-6.0GHz, 30 Watt Non-Stocked Lead-Time 26 Weeks
Min.: 10
Mult.: 10

SMD/SMT Die N-Channel 2 Channel 120 V 3 A 500 mOhms - 3 V 6 GHz 4 GHz GaN
MACOM GaN FETs GaN HEMT Die DC-6.0GHz, 120 Watt

SMD/SMT Die N-Channel 8 Channel 120 V 12 A 100 mOhms - 3 V 6 GHz 4 GHz GaN
MACOM GaN FETs GaN HEMT 1.2-1.4GHz, 250 Watt Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Screw Mount 440162 N-Channel 150 V 18 A - 3 V - 40 C + 130 C 1.4 GHz 1.2 GHz GaN
MACOM GaN FETs GaN HEMT 1.2-1.4GHz, 500 Watt Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Screw Mount 440117 N-Channel 150 V 36 A - 3 V - 40 C + 130 C 1.4 GHz 1.2 GHz GaN