SiC MOSFETs

Results: 59
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac 2,265In Stock
Cut Tape
$18.20
$11.25
$10.64
Reel
$10.64
Min.: 1
Mult.: 1
: 3,000
SMD/SMT PowerFLAT-5 1 Channel 650 V 40 A 67 mOhms - 10 V, + 22 V 5 V 73 nC - 55 C + 175 C 417 W Enhancement
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A 7In Stock
600Expected 2027/02/12
Cut Tape
$22.12
$15.85
$13.96
Reel
$12.82
Min.: 1
Mult.: 1
: 600
AEC-Q100
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package 32In Stock
1,200Expected 2027/02/19
Cut Tape
$22.76
$15.63
$14.36
Reel
$13.00
Min.: 1
Mult.: 1
: 600
SMD/SMT HU3PAK-7 1 Channel 1.2 kV 100 A 28 mOhms - 10 V, + 22 V 3 V 121 nC - 55 C 555 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package 570In Stock
$23.81
$14.14
$13.72
Min.: 1
Mult.: 1
Through Hole HiP247-3 1 Channel 900 V 110 A 15.8 mOhms - 10 V, + 22 V 3.1 V 138 nC - 55 C + 200 C 625 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package 524In Stock
$26.54
$16.60
Min.: 1
Mult.: 1
Through Hole HiP-247-4 1 Channel 1.2 kV 129 A 15 mOhms - 18 V, + 18 V 4.2 V 167 nC - 55 C + 200 C 673 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package 246In Stock
600Expected 2027/07/23
$20.24
$12.18
Min.: 1
Mult.: 1
Through Hole Hip247-4 1 Channel 1.2 kV 100 A 28 mOhms - 10 V, + 22 V 3 V 121 nC - 55 C + 200 C 541 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package 538In Stock
1,000Expected 2027/03/09
Cut Tape
$13.61
$7.75
$7.72
Reel
$7.30
Min.: 1
Mult.: 1
: 1,000
SMD/SMT H2PAK-7 1 Channel 650 V 60 A 39.3 mOhms - 10 V, + 22 V 3 V 48.6 nC - 55 C + 175 C 300 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A 242In Stock
$14.14
$9.47
$8.78
$7.47
Min.: 1
Mult.: 1
Through Hole HiP-247-4 1 Channel 650 V 60 A 29 mOhms - 18 V, + 18 V 4.2 V 51 nC - 55 C + 200 C 313 W Enhancement AEC-Q100


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package 954In Stock
Cut Tape
$13.63
$7.76
$7.73
Reel
$7.32
Min.: 1
Mult.: 1
: 1,000
SMD/SMT H2PAK-7 1 Channel 1.2 kV 40 A 54 mOhms - 18 V, + 18 V 4.2 V 54 nC - 55 C + 175 C 300 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A 710In Stock
600Expected 2027/02/19
$14.07
$9.59
$8.40
Min.: 1
Mult.: 1
Through Hole HiP-247-4 1 Channel 1.2 kV 40 A 54 mOhms - 18 V, + 18 V 4.2 V 56 nC - 55 C + 200 C 312 W Enhancement AEC-Q100


STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package 457In Stock
$11.63
$6.37
$5.94
Min.: 1
Mult.: 1
Through Hole HiP247-4 1 Channel 650 V 30 A 63 mOhms - 10 V, + 22 V 3 V 37.5 nC - 55 C + 200 C 240 W Enhancement


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package 429In Stock
$13.42
$8.97
$8.33
$7.18
Min.: 1
Mult.: 1
Through Hole HiP247-4 1 Channel 650 V 30 A 63 mOhms - 10 V, + 22 V 3 V 37.5 nC - 55 C + 200 C 240 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package 1,404In Stock
Cut Tape
$9.15
$5.01
$4.69
$4.34
Reel
$4.34
Min.: 1
Mult.: 1
: 1,800
SMD/SMT TOLL-8 1 Channel 650 V 30 A 72 mOhms - 10 V, + 22 V 3 V 31 nC - 55 C + 175 C 234 W Enhancement


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package 26In Stock
1,000Expected 2027/01/29
Cut Tape
$16.57
$9.97
Reel
$9.42
Min.: 1
Mult.: 1
: 1,000
SMD/SMT H2PAK-7 1 Channel 650 V 55 A 27 mOhms - 18 V, + 18 V 4.2 V 79.4 nC - 55 C + 175 C 385 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package 13In Stock
1,200On Order
$21.11
$14.56
$13.29
$12.22
Min.: 1
Mult.: 1
Through Hole HiP-247-4 1 Channel 1.2 kV 56 A 37 mOhms - 18 V, + 18 V 4.2 V 73 nC - 55 C + 200 C 388 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package 44In Stock
600Expected 2027/05/07
$18.96
$11.79
$11.06
Min.: 1
Mult.: 1
Through Hole HiP247-3 1 Channel 1.2 kV 56 A 37 mOhms - 10 V, + 22 V 3 V 73 nC - 55 C + 200 C 388 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package 39In Stock
1,200Expected 2027/01/29
$13.80
$9.22
$8.68
$7.78
$7.32
Min.: 1
Mult.: 1
Through Hole HiP-247-4 1 Channel 1.2 kV 30 A 87 mOhms - 18 V, + 18 V 4.2 V 41 nC - 55 C + 200 C 236 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A 620In Stock
Cut Tape
$12.65
$7.39
$7.29
$6.92
Reel
$6.27
Min.: 1
Mult.: 1
: 1,000
SMD/SMT 1 Channel 650 V 30 A 40 mOhms - 10 V, + 22 V 4.2 V 39.5 nC - 55 C + 175 C 221 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an 321In Stock
$17.11
$12.13
$9.04
$8.11
Min.: 1
Mult.: 1
Through Hole 1 Channel 1.2 kV 20 A 239 mOhms - 20 V, + 20 V 3.5 V 45 nC - 55 C + 200 C 175 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac 1,301In Stock
Cut Tape
$31.20
$22.32
$21.13
Reel
$21.13
Min.: 1
Mult.: 1
: 3,000
SMD/SMT PowerFLAT-5 1 Channel 650 V 40 A 18 mOhms - 10 V, + 22 V 5 V 157 nC - 55 C + 175 C 935 W Enhancement
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package 8In Stock
1,800Expected 2027/01/29
Cut Tape
$10.30
$6.47
$5.90
$5.07
Reel
$5.07
Min.: 1
Mult.: 1
: 1,800
SMD/SMT TOLL-8 1 Channel 650 V 35 A 63 mOhms - 10 V, + 22 V 3 V 42.5 nC - 55 C + 175 C 288 W Enhancement


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package 16In Stock
600Expected 2027/05/14
$13.90
$9.76
$7.45
Min.: 1
Mult.: 1
Through Hole HiP-247-3 1 Channel 1.2 kV 40 A 54 mOhms - 18 V, + 18 V 4.2 V 56 nC - 55 C + 200 C 312 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A 1In Stock
600Expected 2027/02/05
$13.68
$9.56
$8.52
$7.29
Min.: 1
Mult.: 1
Through Hole HiP-247-4 1 Channel 650 V 30 A 72 mOhms - 18 V, + 18 V 4.2 V 32 nC - 55 C + 200 C 210 W Enhancement AEC-Q100
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H 5In Stock
600Expected 2027/02/19
$20.18
$10.80
Min.: 1
Mult.: 1
Through Hole HiP-247-3 1 Channel 1.2 kV 36 A 100 mOhms - 10 V, + 22 V 4.9 V 61 nC - 55 C + 200 C 278 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A
988Expected 2027/04/02
Cut Tape
$25.34
$21.60
$18.64
$17.78
Reel
$15.90
Min.: 1
Mult.: 1
: 1,000
AEC-Q100