|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package
- SCTHC250N120G3AG
- STMicroelectronics
-
1:
$76.80
-
32In Stock
-
New Product
|
Mouser Part No
511-SCTHC250N120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package
|
|
32In Stock
|
|
|
$76.80
|
|
|
$60.88
|
|
|
$52.01
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
STPAK-4
|
1 Channel
|
1.2 kV
|
239 A
|
8.5 mOhms
|
- 10 V, + 22 V
|
4.4 V
|
304 nC
|
- 55 C
|
+ 200 C
|
994 W
|
|
AEC-Q100
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL35N65G2V
- STMicroelectronics
-
1:
$18.20
-
2,309In Stock
|
Mouser Part No
511-SCTL35N65G2V
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
2,309In Stock
|
|
|
$18.20
|
|
|
$12.92
|
|
|
$11.25
|
|
|
$9.56
|
|
|
$9.56
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-5
|
1 Channel
|
650 V
|
40 A
|
67 mOhms
|
- 10 V, + 22 V
|
5 V
|
73 nC
|
- 55 C
|
+ 175 C
|
417 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
- SCT019HU120G3AG
- STMicroelectronics
-
1:
$22.12
-
7In Stock
-
600Expected 2027/02/19
-
New Product
|
Mouser Part No
511-SCT019HU120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
|
|
7In Stock
600Expected 2027/02/19
|
|
|
$22.12
|
|
|
$16.13
|
|
|
$13.48
|
|
|
$12.82
|
|
Min.: 1
Mult.: 1
:
600
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q100
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
- SCT012W90G3-4AG
- STMicroelectronics
-
1:
$22.20
-
630In Stock
|
Mouser Part No
511-SCT012W90G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
|
|
630In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-3
|
1 Channel
|
900 V
|
110 A
|
15.8 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
138 nC
|
- 55 C
|
+ 200 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
$26.73
-
540In Stock
|
Mouser Part No
511-SCT015W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
540In Stock
|
|
|
$26.73
|
|
|
$21.40
|
|
|
$18.50
|
|
|
$17.51
|
|
|
Quote
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
1 Channel
|
1.2 kV
|
129 A
|
15 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
167 nC
|
- 55 C
|
+ 200 C
|
673 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
$18.69
-
448In Stock
|
Mouser Part No
511-SCT018W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
448In Stock
|
|
|
$18.69
|
|
|
$12.14
|
|
|
$11.30
|
|
|
$10.01
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
77 nC
|
- 55 C
|
+ 200 C
|
398 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
$20.24
-
271In Stock
-
600On Order
|
Mouser Part No
511-SCT020W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
271In Stock
600On Order
|
|
|
$20.24
|
|
|
$12.65
|
|
|
$12.04
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
Hip247-4
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
+ 200 C
|
541 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
$18.96
-
247In Stock
-
600Expected 2027/03/12
|
Mouser Part No
511-SCT025W120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
247In Stock
600Expected 2027/03/12
|
|
|
$18.96
|
|
|
$11.79
|
|
|
$11.06
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-3
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
$13.61
-
596In Stock
-
1,000Expected 2027/02/09
|
Mouser Part No
511-SCT027H65G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
|
|
596In Stock
1,000Expected 2027/02/09
|
|
|
$13.61
|
|
|
$9.50
|
|
|
$8.66
|
|
|
$7.87
|
|
|
$7.20
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
1 Channel
|
650 V
|
60 A
|
39.3 mOhms
|
- 10 V, + 22 V
|
3 V
|
48.6 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
$16.56
-
246In Stock
|
Mouser Part No
511-SCT027W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
246In Stock
|
|
|
$16.56
|
|
|
$12.64
|
|
|
$8.78
|
|
|
$7.47
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
1 Channel
|
650 V
|
60 A
|
29 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
51 nC
|
- 55 C
|
+ 200 C
|
313 W
|
Enhancement
|
AEC-Q100
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
$11.63
-
487In Stock
|
Mouser Part No
511-SCT040W65G3-4
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
487In Stock
|
|
|
$11.63
|
|
|
$6.37
|
|
|
$5.94
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
$13.42
-
481In Stock
|
Mouser Part No
511-SCT040W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
481In Stock
|
|
|
$13.42
|
|
|
$9.72
|
|
|
$8.33
|
|
|
$7.18
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
- SCT055TO65G3
- STMicroelectronics
-
1:
$9.15
-
1,404In Stock
|
Mouser Part No
511-SCT055TO65G3
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
|
|
1,404In Stock
|
|
|
$9.15
|
|
|
$6.26
|
|
|
$5.16
|
|
|
$4.69
|
|
|
$4.29
|
|
|
$4.29
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
SMD/SMT
|
TOLL-8
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
3 V
|
31 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
$16.57
-
22In Stock
-
1,000Expected 2027/01/29
|
Mouser Part No
511-SCT018H65G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
22In Stock
1,000Expected 2027/01/29
|
|
|
$16.57
|
|
|
$11.69
|
|
|
$9.97
|
|
|
$9.30
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
79.4 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
$21.11
-
13In Stock
-
1,200On Order
|
Mouser Part No
511-SCT025W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
13In Stock
1,200On Order
Stock:
13 Can Dispatch Immediately
On Order:
600 Expected 2027/06/04
600 Expected 2027/06/18
Factory Lead Time:
36 Weeks
|
|
|
$21.11
|
|
|
$14.56
|
|
|
$13.29
|
|
|
$12.22
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
$14.07
-
109In Stock
-
600Expected 2026/09/07
|
Mouser Part No
511-SCT040W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
109In Stock
600Expected 2026/09/07
|
|
|
$14.07
|
|
|
$10.40
|
|
|
$8.52
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q100
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
$13.90
-
33In Stock
-
600Expected 2027/05/07
|
Mouser Part No
511-SCT040W120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
33In Stock
600Expected 2027/05/07
|
|
|
$13.90
|
|
|
$9.76
|
|
|
$7.45
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-3
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
$15.10
-
35In Stock
-
1,200Expected 2027/01/29
|
Mouser Part No
511-SCT070W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
35In Stock
1,200Expected 2027/01/29
|
|
|
$15.10
|
|
|
$11.33
|
|
|
$7.15
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
41 nC
|
- 55 C
|
+ 200 C
|
236 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
- SCT040H65G3AG
- STMicroelectronics
-
1:
$12.11
-
727In Stock
|
Mouser Part No
511-SCT040H65G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
|
|
727In Stock
|
|
|
$12.11
|
|
|
$6.82
|
|
|
$6.63
|
|
|
$6.27
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
30 A
|
40 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
39.5 nC
|
- 55 C
|
+ 175 C
|
221 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
- SCT20N120AG
- STMicroelectronics
-
1:
$17.11
-
334In Stock
|
Mouser Part No
511-SCT20N120AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
|
|
334In Stock
|
|
|
$17.11
|
|
|
$12.13
|
|
|
$9.04
|
|
|
$8.11
|
|
|
Quote
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
|
1 Channel
|
1.2 kV
|
20 A
|
239 mOhms
|
- 20 V, + 20 V
|
3.5 V
|
45 nC
|
- 55 C
|
+ 200 C
|
175 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL90N65G2V
- STMicroelectronics
-
1:
$31.20
-
1,301In Stock
|
Mouser Part No
511-SCTL90N65G2V
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
1,301In Stock
|
|
|
$31.20
|
|
|
$22.32
|
|
|
$22.31
|
|
|
$21.13
|
|
|
$21.13
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
SMD/SMT
|
PowerFLAT-5
|
1 Channel
|
650 V
|
40 A
|
18 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 175 C
|
935 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
- SCT020HU120G3AG
- STMicroelectronics
-
1:
$22.76
-
5In Stock
-
1,200On Order
-
New Product
|
Mouser Part No
511-SCT020HU120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
|
|
5In Stock
1,200On Order
Stock:
5 Can Dispatch Immediately
On Order:
600 Expected 2027/02/19
600 Expected 2027/03/05
Factory Lead Time:
36 Weeks
|
|
|
$22.76
|
|
|
$17.00
|
|
|
$14.35
|
|
|
$13.00
|
|
Min.: 1
Mult.: 1
:
600
|
|
|
SMD/SMT
|
HU3PAK-7
|
1 Channel
|
1.2 kV
|
100 A
|
28 mOhms
|
- 10 V, + 22 V
|
3 V
|
121 nC
|
- 55 C
|
|
555 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- SCT040TO65G3
- STMicroelectronics
-
1:
$10.30
-
14In Stock
-
1,800Expected 2027/01/29
|
Mouser Part No
511-SCT040TO65G3
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
|
|
14In Stock
1,800Expected 2027/01/29
|
|
|
$10.30
|
|
|
$7.08
|
|
|
$5.68
|
|
|
$5.40
|
|
|
$5.00
|
|
|
$5.00
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
SMD/SMT
|
TOLL-8
|
1 Channel
|
650 V
|
35 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
42.5 nC
|
- 55 C
|
+ 175 C
|
288 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055W65G3-4AG
- STMicroelectronics
-
1:
$15.04
-
5In Stock
-
600Expected 2027/04/16
|
Mouser Part No
511-SCT055W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
5In Stock
600Expected 2027/04/16
|
|
|
$15.04
|
|
|
$11.46
|
|
|
$10.26
|
|
|
$8.32
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
32 nC
|
- 55 C
|
+ 200 C
|
210 W
|
Enhancement
|
AEC-Q100
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3AG
- STMicroelectronics
-
1:
$13.08
-
14In Stock
|
Mouser Part No
511-SCT070H120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
|
|
14In Stock
|
|
|
$13.08
|
|
|
$9.11
|
|
|
$7.33
|
|
|
$6.84
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|