QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Results: 41
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation
Qorvo GaN FETs DC-6GHz 28V P3dB 10W @3.3GHz 375In Stock
Min.: 1
Mult.: 1

SMD/SMT NI-200 N-Channel 650 mA 12.5 W
Qorvo GaN FETs DC-6.0GHz 18 Watt 28V GaN 129In Stock
Min.: 1
Mult.: 1

NI-200
Qorvo GaN FETs DC-3.7GHz 65W 50V SSG 20dB GaN 25In Stock
25On Order
Min.: 1
Mult.: 1

SMD/SMT NI-360 N-Channel 50 V 2.5 A - 2.8 V - 40 C + 85 C 64 W
Qorvo GaN FETs DC-3.5GHz GaN 2X 120W 36Volt
9In Stock
Min.: 1
Mult.: 1

NI-650 N-Channel
Qorvo GaN FETs DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN 61In Stock
Min.: 1
Mult.: 1

SMD/SMT QFN-16 N-Channel 50 V 400 mA - 2.8 V - 40 C + 85 C 13.5 W
Qorvo GaN FETs DC-3.6GHz GaN 90W 48V 54In Stock
Min.: 1
Mult.: 1
Reel: 100

SMD/SMT DFN-6 48 V - 40 C
Qorvo GaN FETs DC-6.0GHz 30 Watt 28V GaN Flanged 53In Stock
Min.: 1
Mult.: 1

NI-200
Qorvo GaN FETs 1.2-1.4GHz 500W 50V SSG 20dB GaN 16In Stock
Min.: 1
Mult.: 1

SMD/SMT RF-565 N-Channel 50 V 15 A - 2.8 V - 40 C + 85 C 370 W
Qorvo GaN FETs DC-6.0GHz 30 Watt 28V GaN Flangeless 16In Stock
Min.: 1
Mult.: 1

NI-200
Qorvo GaN FETs DC-3.5GHz 100W 28V GaN 33In Stock
Min.: 1
Mult.: 1

Screw Mount NI-360 N-Channel 28 V 12 A - 7 V, + 2 V - 2.9 V - 40 C + 85 C 144 W
Qorvo GaN FETs DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN 244In Stock
Min.: 1
Mult.: 1

SMD/SMT QFN-16 N-Channel 50 V 700 mA - 2.8 V - 40 C + 85 C 17.5 W
Qorvo GaN FETs DC-4GHz 45W GaN 48V 68In Stock
250Expected 2026/04/08
Min.: 1
Mult.: 1
Reel: 250

SMD/SMT QFN-20 48 V - 40 C 45 W
Qorvo GaN FETs DC-3.2GHz 120W 50V SSG 17.5dB GaN 25In Stock
Min.: 1
Mult.: 1

SMD/SMT NI-360 N-Channel 50 V 4 A - 2.8 V - 40 C + 85 C 127 W
Qorvo GaN FETs DC-3.7GHz 65W 50V SSG 20dB GaN 25In Stock
25Expected 2026/03/09
Min.: 1
Mult.: 1

Screw Mount NI-360 N-Channel 50 V 2.5 A - 2.8 V - 40 C + 85 C 64 W
Qorvo GaN FETs 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V 100In Stock
Min.: 1
Mult.: 1

SMD/SMT QFN-16 P-Channel 32 V 600 mA 7.5 W
Qorvo GaN FETs .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN 141In Stock
Min.: 1
Mult.: 1

SMD/SMT QFN-EP-16 N-Channel 32 V 557 mA 15.3 W
Qorvo GaN FETs 0.03-4.0 GHz, 30W, 32V GaN RF Tr 29In Stock
Min.: 1
Mult.: 1

SMD/SMT QFN-20 32 V 1.8 A
Qorvo GaN FETs 8-12GHz 5W GaN PAE 50% Gain 13dB 5In Stock
700On Order
Min.: 1
Mult.: 1

SMD/SMT QFN-16 N-Channel 1 Channel 32 V 326 mA + 225 C 8.4 W
Qorvo GaN FETs DC-3.2GHz 120W 50V SSG 17.5dB GaN
45Expected 2026/03/24
Min.: 1
Mult.: 1

Screw Mount NI-360 N-Channel 50 V 4 A - 2.8 V - 40 C + 85 C 127 W
Qorvo GaN FETs DC-2.7GHz 150W PAE 64.8% Non-Stocked Lead-Time 20 Weeks
Min.: 100
Mult.: 100
Reel: 100

SMD/SMT DFN-6 N-Channel 1.7 A - 40 C + 85 C 67 W
Qorvo GaN FETs 2.62-2.69GHz GaN 200W 48V Non-Stocked
Min.: 25
Mult.: 25

SMD/SMT NI400-2 N-Channel - 40 C
Qorvo GaN FETs DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN Non-Stocked
Min.: 25
Mult.: 25

SMD/SMT NI-780 N-Channel 36 V 24 A + 275 C 288 W
Qorvo GaN FETs DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN Non-Stocked
Min.: 25
Mult.: 25

SMD/SMT NI-780 N-Channel 36 V 24 A + 250 C 288 W
Qorvo GaN FETs DC-3.5GHz 36Volt GaN 120 Watt Peak
Non-Stocked
Min.: 25
Mult.: 25

SMD/SMT NI-360 N-Channel 36 V 12 A 117 W
Qorvo GaN FETs DC-3.5GHz 36Volt GaN 120 Watt Peak
Non-Stocked
Min.: 25
Mult.: 25

SMD/SMT N-Channel 36 V 12 A 117 W