Toshiba XPN12006NC Automotive U-MOSVIII-H MOSFETs
Toshiba XPN12006NC Automotive U-MOSVIII-H MOSFETs are AEC-Q101 qualified in a compact, thin TSON package. The XPN12006NC features low drain-source on-resistance, low leakage current, and an enhancement mode.
The Toshiba XPN12006NC U-MOSVIII-H Power MOSFETs are ideal for switching voltage regulators, DC-DC converters, motor drivers, and automotive applications.
Features
- AEC-Q101 qualified
- Small, thin package
Applications
- Automotive
- Switching voltage regulators
- DC-DC converters
- Motor drivers
Specifications
- RDS(ON)=9.8mΩ (typ.) (VGS=10V) low drain-source on-resistance
- IDSS=10µA (max) (VDS=60V) low leakage current
- Vth=1.5 to 2.5V (VDS=10V, ID=0.2mA) enhancement mode
Associated Products
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Internal Circuit
Published: 2020-09-23
| Updated: 2024-11-22